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Dynamic windows based on reversible metal electrodeposition are an attractive way to enhance the energy efficiency of buildings and show great commercial potential. Dynamic windows that rely on liquid electrolytes are at risk of short circuiting when two electrodes contact, especially at larger-scale. Here we developed a poly (vinyl alcohol) (PVA) gel polymer electrolyte (GPE) with 85% transmittance, that is, sufficiently stiff to act as a separator. The GPE is implemented into windows that exhibit comparable electrochemical and optical properties to windows using a liquid electrolyte. Furthermore, the GPE enables the fabrication of windows with dual-working electrodes (WE) and a metal mesh counter electrode in the center without short-circuiting. Our dual-WE PVA GPE window reaches the 0.1% transmittance state in 101 s, more than twice the speed of liquid windows with one working electrode (207 s). Additionally, each side of the dual-WE GPE window can be tinted individually to demonstrate varied optical effects (i.e., more reflective, or more absorptive), providing users and intelligent building systems with greater control over the appearance and performance of the windows in a single device architecture. 

Perovskite photovoltaics (PVs) are under intensive development for promise in terrestrial energy production. Soon, the community will find out how much of that promise may become reality. Perovskites also open new opportunities for lower cost space power. However, radiation tolerance of space environments requires appropriate analysis of relevant devices irradiated under representative radiation conditions. We present guidelines designed to rigorously test the radiation tolerance of perovskite PVs. We review radiation conditions in common orbits, calculate nonionizing and ionizing energy losses (NIEL and IEL) for perovskites, and prioritize proton radiation for effective nuclear interactions. Low-energy protons (0.05–0.15 MeV) create a representative uniform damage profile, whereas higher energy protons (commonly used in ground-based evaluation) require significantly higher fluence to accumulate the equivalent displacement damage dose due to lower scattering probability. Furthermore, high-energy protons may ‘‘heal’’ devices through increased electronic ionization. These procedural guidelines differ from those used to test conventional semiconductors.